MOSFET Gate Charge Loss
Estimate gate-drive power from Qg, Vdrive, and fsw. Outputs energy-per-cycle, average gate current, and total gate-drive power.
How to Use
- Enter MOSFET total gate charge Qg from the datasheet (typically at a stated Vgs).
- Enter your gate-drive voltage Vdrive (e.g., 10V or 12V) and switching frequency fsw.
- Set how many MOSFET gates are being driven (total devices driven at that frequency).
- Check “Show Work” to verify units and see the exact equations used.
Show Work (step-by-step)
Gate Charge Loss Formulas
The ideal gate-drive energy per switching cycle is:
E = Qg × Vdrive
- Energy per cycle:
E = Qg × Vdrive - Average gate current:
Iavg = Qg × fsw - Gate-drive power (per device):
Pgate = Qg × Vdrive × fsw - Total power (N devices):
Ptotal = N × Pgate
FAQ
Is gate charge loss “MOSFET loss” or “driver loss”?
It’s power drawn from the gate driver supply to charge and discharge the MOSFET gate each cycle. It mostly heats the driver/output stage and gate network (and some is dissipated in the MOSFET’s gate structure).
Does duty cycle change Qg loss?
In the ideal model, no — the gate is charged/discharged per switching event, so the main driver is switching frequency. Duty cycle matters more for conduction loss, not gate-charge power.
Which Qg should I use from the datasheet?
Use the Total Gate Charge (Qg) at the Vgs you’re actually driving (often 10V). If your driver voltage differs, Qg may differ too; datasheets usually include a Qg vs Vgs curve.
What about Miller plateau / Qgs / Qgd?
Total Qg already includes those regions. This tool uses total Qg for a clean first-order estimate. For edge timing, switching node dv/dt, and EMI, you’d model Qgd + gate resistor + driver current limits.
Tool Info
Last updated:
Updates may include additional unit presets, driver notes, and edge-case handling for extreme frequencies/charges.